iNano2020 webinar -- Terahertz camera-less imaging and spectroscopy
· 23.10.2020 · 17:11:57 ··· ··· Friday ·· 5 (5)
Anis Rahman Keynote talk by Anis Rahman
Abstract:
Terahertz camera-less imaging and spectroscopy add a new frontier for very high sensitivity spectroscopy and lattice resolution imaging, overcoming the Abbe’s diffraction limit. The Dendrimer Dipole Excitation (DDE) based CW terahertz source enables the advent of critical characterization of the zero-dimensional to 3D materials and their interactions among themselves and with other materials forming interfaces. T-ray penetrates almost all materials; thus, offers the advent of probing the inner structures including the volume imaging and layer-by-layer analysis. Here, the applications of this emerging technology for solving critical problems in the semiconductor and nanotechnology world bridging the knowledge gap for 3D interactions among and between the materials on sub-Angstrom scale are presented. Interfaces play important roles in all semiconductor fabrication processes. However, effective characterization of interfaces is complicated because of inherent unknowns involved. For example, consider the case where two layers of materials have been deposited on a silicon substrate. Here, the silicon wafer is well characterized. The material properties of layer-1 and layer-2 may be known by themselves, but deposition involves evaporation of a material and then back into solid phase by the deposition process. Consequently, the deposited materials’ lattice will/may suffer from defects such as stacking fault and dislocations. Therefore, the final system involves unknowns such as the lattice structure of layer-1 and layer-2, the interface between layer-1/layer-2, and the interface between layer-1/silicon. Only known entity under this condition is the silicon lattice, however, the deposition process still may influence the top surface of the substrate and thus the silicon lattice may suffer from defect creation and/or some rearrangement of the atoms. Quantification of such interfaces at the lattice scale is a huge challenge by the current state of the art; especially, a non-destructive inspection of the deposited layers and interfaces that requires interrogation across the depth. This paper describes a non-contact, non-destructive technique via high resolution, camera-less, terahertz imaging for critical investigation of semiconductor interfaces along with practical examples.
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